Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO

A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects. This exploits the spin-layer locking mechanism present in centrosymmetric materials local dipole fields, where a weak electric field can easily manipulate just one of spin channels. Here, we propose novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays largest effects among (up $k_R = 0.08$ {\AA}$^{-1}$), leading $\pi/2$ rotation spins over 1 nm. The had been predicted be exfoliable from its experimentally-known 3D bulk counterpart, binding energy even lower than graphene. We characterize model first-principles simulations interplay gate-controlled parameters for such devices: doping channel selection. show that ability split channels diminishes doping, specific gate-operation guidelines apply all devices based on locking.